[LEDinside News] "Jingyuan Optoelectronics has always had a belief that it is possible to realize LED infinite possibilities." Xie Mingxun, deputy general manager of Jingyuan Optoelectronics Co., Ltd., LEDforum hosted by LEDinside, China LED Network and Guangzhou International Lighting Exhibition on June 11th The 2015 China International LED Market Trend Summit Forum said.
According to the crystal optoelectronic test data, the efficiency of the general Si MOSFET conversion is 87%, and the replacement of GaN power components can achieve 95%. However, GaN materials have been used in LED blue substrate materials, but they have neglected the application of their most primitive semiconductor materials.
According to data from the US Energy Administration, global energy accounts for 11.1% of wind, solar and other energy sources other than natural gas, coal and nuclear energy. When using Si power devices to achieve energy conversion, the loss rate is as high as 10%. It can be seen that the application of GaN materials is not It should be limited to this.
Xie Minxun, deputy general manager of Jingyuan Optoelectronics R&D Center, said that the first generation of 4H-SiC commercialized transistors maintain large current flow through large size and high cost, while gold GaN high voltage transistors can achieve high voltage, high current, and response. Fast and lower cost.
From traditional light bulbs to today's LEDs, lighting experiences traditional lighting, DC-driven LED lighting, and AC LED lighting. AC LEDs will be the ultimate ideal for LED lighting, and the current market is most concerned with high voltage LEDs.
The most important factor for high voltage LEDs is the drive components, and the emergence of GaN power devices solves this problem. According to Mr. Xie Mingxun, the GaN power device is a product that combines the small size and temperature resistance of the inductor and capacitor, and realizes the simplification of the circuit of the LED lighting product.
As a leader, Jingyuan Optoelectronics has adopted the collaborative development model to introduce DOB technology based on GaN high-voltage transistors, which directly encapsulates the power driver on the printed circuit board, reduces the size of the light source, and greatly reduces the threshold for traditional lighting factories to enter the LED lighting. Driving blue LEDs with blue light materials makes LED applications ideal for unlimited possibilities.
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