At the 71st Session of the Applied Physics Society held at Nagasaki University on September 14-17, 2010, the Osaka University of Japan and the Industrial Technology Research Institute announced the use of diamond semiconductors to create Schottky barrier diodes (SBD). When investigating the temperature characteristics, it was found that the current characteristics at the time of shutdown at a temperature of 25 to 200 ° C do not have temperature dependence.
The University of Osaka and Synthetic Research have developed a combination of diamond semiconductors and ruthenium (Ru)-based Schottky electrodes for SBD and measured their switching performance. According to Osaka University and Others, it has been confirmed that the SBD can achieve high-speed switching performance of 0.01 μs, and the recovery current depending on the parasitic inductance and current change speed di/dt is only 40 A/cm 2 and the loss is small. Even if the temperature is changed within the range of 25 to 200 ° C, the switching performance does not change. Therefore, the SBD using diamond "is expected to be applied to a power conversion device that does not require a cooling device."
It has also been reported that power semiconductor ICs using SiC can work stably at temperatures exceeding 200 °C. However, when used in such a high-temperature environment, there is a problem of how to ensure solder heat resistance, heat resistance of components such as packages, and peripheral circuits.
The University of Osaka and Synthetic Research have developed a combination of diamond semiconductors and ruthenium (Ru)-based Schottky electrodes for SBD and measured their switching performance. According to Osaka University and Others, it has been confirmed that the SBD can achieve high-speed switching performance of 0.01 μs, and the recovery current depending on the parasitic inductance and current change speed di/dt is only 40 A/cm 2 and the loss is small. Even if the temperature is changed within the range of 25 to 200 ° C, the switching performance does not change. Therefore, the SBD using diamond "is expected to be applied to a power conversion device that does not require a cooling device."
It has also been reported that power semiconductor ICs using SiC can work stably at temperatures exceeding 200 °C. However, when used in such a high-temperature environment, there is a problem of how to ensure solder heat resistance, heat resistance of components such as packages, and peripheral circuits.
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